TOSHIBA LAUNCHES 30V N-CHANNEL COMMON-DRAIN MOSFET SUITABLE FOR DEVICES WITH USB AND FOR PROTECTING BATTERY PACKS

 

Toshiba: SSM10N961L, a 30V N-channel common-drain MOSFET in a new, small, thin package. (Graphic: Business Wire) 

KAWASAKI, Japan, Nov 7 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices with USB and for protecting battery packs. Shipments start today. 
 

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20231106160986/en/ 

Until now, Toshiba’s line-up of N-channel common-drain MOSFETs has focused on 12V products, mainly for use in protecting the lithium-ion battery packs of smartphones. The release of a 30V product realizes a wider selection of applications requiring voltages higher than 12V, such as load switching for the power lines of USB charging devices, and the protection of lithium-ion battery packs in laptop PCs and tablets.

Realizing a bi-directional switch with a low drain-source on-resistance (R_DS(ON)) has required two MOSFETs, either 3.3×3.3mm or 2×2 mm, with low R_DS(ON). Toshiba’s new product uses a new, small, thin package TCSPAG-341​501 (3.37mm​×1.47mm (typ.), t=0.11mm (typ.)), and features low source-source on-resistance (R_SS(ON)) of 9.9mΩ (typ.) in a single package common-drain configuration. 

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